| Title |
Nb₃Sn Thin Film Coating Method for Superconducting Multilayered Structure |
| Authors |
- R. Ito, T. Nagata
ULVAC, Inc, Chiba, Japan
- H. Hayano, R. Katayama, T. Kubo, T. Saeki
KEK, Ibaraki, Japan
- H. Ito
Sokendai, Ibaraki, Japan
- Y. Iwashita
Kyoto ICR, Uji, Kyoto, Japan
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| Abstract |
S-I-S (superconductor-insulator-superconductor) multilayered structure has been proposed in order to increase the maximum acceleration gradient of SRF cavities. Nb₃Sn is the material most expected as a superconducting layer of the S-I-S multilayered structure because it offers both a large critical temperature and large predicted Hsh. Most important in fabricating Nb₃Sn thin films is the stoichiometry of the material produced, and the lack of tin leads to performance degradation. We have launched a new in-house DC magnetron sputtering apparatus for Nb₃Sn deposition. Nb and Sn layers were alternately and repeatedly deposited on Si wafer while adjusting the film thickness of each layer, so we successfully obtained Nb-Sn films having appropriate composition ratio. The as-deposited films were annealed under the temperature of 600 degree C for 1 hour to generate the Nb₃Sn phase. The characteristics of Nb-Sn films evaluated by XRD, XRF, FE-SEM, and so on. We also measured critical temperature of the annealed films. In this paper, the detail of the Nb₃Sn coating method and the measurement result of the Nb-Sn films will be reported.
|
| Paper |
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| Conference |
SRF2019 |
| Series |
International Conference on RF Superconductivity (19th) |
| Location |
Dresden, Germany |
| Date |
30 June-05 July 2019 |
| Publisher |
JACoW Publishing, Geneva, Switzerland |
| Editorial Board |
Peter Michel (HZDR, Dresden, Germany); André Arnold (HZDR, Dresden, Germany); Volker RW Schaa (GSI, Darmstadt, Germany) |
| Online ISBN |
978-3-95450-211-0 |
| Online ISSN |
"" |
| Received |
02 July 2019 |
| Accepted |
03 July 2019 |
| Issue Date |
14 August 2019 |
| DOI |
doi:10.18429/JACoW-SRF2019-TUP077 |
| Pages |
628-631 |
| Copyright |
 Published by JACoW Publishing under the terms of the Creative Commons Attribution 3.0 International license. Any further distribution of this work must maintain attribution to the author(s), the published article's title, publisher, and DOI. |
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