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https://doi.org/10.18429/JACoW-SRF2019-MOP013
Title Reducing Surface Roughness of Nb₃Sn Through Chemical Polishing Treatments
Authors
  • H. Hu, M. Liepe, R.D. Porterpresenter
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
Abstract Niobium-3 tin (Nb₃Sn) is a promising alternative material for SRF cavities, with theoretical limits for critical temperatures and superheating fields reaching twice that of conventional Nb cavities. However, currently achievable accelerating gradients in Nb₃Sn cavities are much lower than their theoretical limit. One limitation to the maximum accelerating gradient is surface magnetic field enhancement caused by the surface roughness of Nb₃Sn. However, there are currently no standard techniques used to reduce Nb₃Sn surface roughness. Since Nb₃Sn is only 2-3 microns thick, it is difficult to selectively polish Nb₃Sn without removing the entire layer. Here, we investigate reducing the surface roughness of Nb₃Sn through applying chemical polishing treatments, including modified versions of standard techniques such as Buffered Chemical Polishing (BCP) and Electropolishing (EP). Through data acquired from Atomic Force Microscope (AFM) scans, SEM scans, and SEM-EDS analysis, we show the effects of these chemical treatments in reducing surface roughness and consider the changes in the chemical composition of Nb₃Sn that may occur through the etching process. We find that BCP with a 1:1:8 solution is ineffective while EP halves the surface roughness of Nb₃Sn.
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Conference SRF2019
Series International Conference on RF Superconductivity (19th)
Location Dresden, Germany
Date 30 June-05 July 2019
Publisher JACoW Publishing, Geneva, Switzerland
Editorial Board Peter Michel (HZDR, Dresden, Germany); André Arnold (HZDR, Dresden, Germany); Volker RW Schaa (GSI, Darmstadt, Germany)
Online ISBN 978-3-95450-211-0
Online ISSN ""
Received 01 July 2019
Accepted 04 July 2019
Issue Date 14 August 2019
DOI doi:10.18429/JACoW-SRF2019-MOP013
Pages 48-50
Copyright
Creative Commons CC logoPublished by JACoW Publishing under the terms of the Creative Commons Attribution 3.0 International license. Any further distribution of this work must maintain attribution to the author(s), the published article's title, publisher, and DOI.