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URLhttps://doi.org/10.18429/JACoW-NAPAC2025-THP040
TitleGrowth and characterization of GaAs-based spin-polarized photocathodes
Authors
  • P. Saha, J. Walsh, L. Lathpandura, L. Cultrera, M. Boukhicha, R. Bagy, T. Tsang
    Brookhaven National Laboratory
  • A. Muhowski
    Sandia National Laboratories
AbstractSpin-polarized electron sources find application in both high-energy and nuclear physics experiments. We describe in detail the design and characterization of different photocathodes based on GaAs/GaAsP superlattice structures. These structures are fabricated with a Distributed Bragg Reflector (DBR) aimed at achieving a high quantum efficiency (QE)~ 20% in addition to a high electron spin polarization (ESP) ~85% at the desired wavelength of 780 nm. We present the QE and ESP measurements of photoemitted electrons as a function of wavelength of incident light, along with morphological and photoluminescence measurements.
Paperdownload: THP040.pdf
CiteBibTeX, LaTeX, Text/Word, RIS, EndNote
Conference6th North American Particle Accel. Conf. (NAPAC2025)
Series
LocationSacramento, CA, USA
Date10-15 Aug 2025
PublisherJACoW Publishing, Geneva, Switzerland
Editorial BoardTor O. Raubenheimer (SLAC), Roark A. Marsh (LLNL), Eric Prebys (UC Davis), Ling Wang (MSU), Petr M. Anisimov (LANL), Kip Bishofberger (LANL), Gustavo Bruno (ANL), Zhichu Chen (SARI), Jan Chrin (PSI), Kelly Jaje (ANL), Jaeyu Lee (POSTECH), Magdalena Montes-Loera (SLAC), Mary Saethre (PHENOTYPE), Tasha Summers (SLAC), Kent Wootton (ANL)
Online ISBN978-3-95450-261-5
Online ISSN2673-7000
Received07 August 2025
Revised14 August 2025
Accepted15 August 2025
Issued28 January 2026
DOI10.18429/JACoW-NAPAC2025-THP040
Pages1030-1033