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@InProceedings{sun:napac2019-weplm60,
author = {Z. Sun and X. Deng and M. Liepe and J.T. Maniscalco and T.E. Oseroff and R.D. Porter and D. Zhang},
% author = {Z. Sun and X. Deng and M. Liepe and J.T. Maniscalco and T.E. Oseroff and R.D. Porter and others},
% author = {Z. Sun and others},
title = {{Fast Sn-Ion Transport on Nb Surface for Generating NbxSn Thin Films and XPS Depth Profiling}},
booktitle = {Proc. NAPAC'19},
pages = {727--730},
paper = {WEPLM60},
language = {english},
keywords = {interface, electron, cavity, radio-frequency, SRF},
venue = {Lansing, MI, USA},
series = {North American Particle Accelerator Conference},
number = {4},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {10},
year = {2019},
issn = {2673-7000},
isbn = {978-3-95450-223-3},
doi = {10.18429/JACoW-NAPAC2019-WEPLM60},
url = {http://jacow.org/napac2019/papers/weplm60.pdf},
note = {https://doi.org/10.18429/JACoW-NAPAC2019-WEPLM60},
abstract = {In this work, we propose and demonstrate a fast and facile approach for NbxSn thin film deposition through the ion exchange reaction. By simply dipping a tin precursor on the Nb substrate surface, a ~600 nm thin film is generated due to the electronegativity differ-ence between Sn and Nb. Through X-ray photoelec-tron spectroscopy (XPS) depth profiling, the composi-tional information as a function of film thickness was obtained. Results showed a Sn layer on the film sur-face, Sn-rich and Nb-rich NbxSn layers as the majority of the film, and a ~60 nm Nb₃Sn layer at the film/substrate interface. Quantitative analysis con-firmed stoichiometric Nb/Sn ratio for the Nb₃Sn layer. This deposition method is demonstrated to be an alter-native choice for Nb₃Sn film growth.},
}