<xml>
  <records>
    <record>
       <contributors>
          <authors>
             <author>Alekou, A.</author>
             <author>Bartolini, R.</author>
             <author>Carmignani, N.</author>
             <author>Liuzzo, S.M.</author>
             <author>Pulampong, T.</author>
             <author>Raimondi, P.</author>
             <author>Walker, R.P.</author>
          </authors>
       </contributors>
       <titles>
          <title>
             Double Triple Bend Achromat for Next Generation 3 GeV Light Sources
          </title>
       </titles>
		 <publisher>JACoW</publisher>
       <pub-location>Geneva, Switzerland</pub-location>
		 <isbn>978-3-95450-180-9</isbn>
		 <electronic-resource-num>10.18429/JACoW-NAPAC2016-THPOA65</electronic-resource-num>
		 <language>English</language>
		 <pages>1237-1240</pages>
       <pages>THPOA65</pages>
       <keywords>
          <keyword>ion</keyword>
          <keyword>injection</keyword>
          <keyword>lattice</keyword>
          <keyword>optics</keyword>
          <keyword>SRF</keyword>
       </keywords>
       <work-type>Contribution to a conference proceedings</work-type>
       <dates>
          <year>2017</year>
          <pub-dates>
             <date>2017-01</date>
          </pub-dates>
       </dates>
       <urls>
          <related-urls>
              <url>http://dx.doi.org/10.18429/JACoW-NAPAC2016-THPOA65</url>
              <url>https://jacow.org/napac2016/papers/thpoa65.pdf</url>
          </related-urls>
       </urls>
       <abstract>
          The Double Triple Bend Achromat (DTBA) is a newly designed cell for a next generation 3 GeV synchrotron light source. DTBA is inspired by the Double-Double Bend Achromat (DDBA) cell designed for Diamond and originates from a modification of the ESRF HMBA 6 GeV cell, combining in this way the best characteristics of each lattice. The lattice achieves a natural emittance as low as 131 pm, together with a sufficient Dynamic Aperture (DA) for injection and lifetime. Two cells are designed with different end-drift lengths providing two different Long Straight Sections (LSS) for insertion devices, 5 and 7.5 m long, in addition to a new middle-straight section of 3 m. The characteristics of the lattice together with the results on emittance, DA and Touschek lifetime are presented after extensive linear and non-linear optimisations, with and without the presence of errors and corrections.
       </abstract>
    </record>
  </records>
</xml>
