<xml>
  <records>
    <record>
       <contributors>
          <authors>
             <author>Zhao, L.</author>
             <author>An, S.</author>
             <author>Ke, Y.J.</author>
             <author>Pengjiao, Z.</author>
             <author>Wenliang, L.</author>
             <author>Zhou, B.Z.</author>
          </authors>
       </contributors>
       <titles>
          <title>
             Development of 150.4MHz Continuous  Wave Solid-state Amplifier
          </title>
       </titles>
		 <publisher>JACoW Publishing</publisher>
       <pub-location>Geneva, Switzerland</pub-location>
		 <isbn>2226-0366</isbn>
		 <isbn>978-3-95450-194-6</isbn>
		 <electronic-resource-num>10.18429/JACoW-LINAC2018-THPO104</electronic-resource-num>
		 <language>English</language>
		 <pages>917-919</pages>
       <pages>THPO104</pages>
       <keywords>
          <keyword>power-supply</keyword>
          <keyword>coupling</keyword>
          <keyword>controls</keyword>
          <keyword>insertion</keyword>
          <keyword>radiation</keyword>
       </keywords>
       <work-type>Contribution to a conference proceedings</work-type>
       <dates>
          <year>2019</year>
          <pub-dates>
             <date>2019-01</date>
          </pub-dates>
       </dates>
       <urls>
          <related-urls>
              <url>https://doi.org/10.18429/JACoW-LINAC2018-THPO104</url>
              <url>http://jacow.org/linac2018/papers/thpo104.pdf</url>
          </related-urls>
       </urls>
       <abstract>
          A 150.4MHz to 155.4MHz, 300W continuous wave solid-state amplifier as an accelerator power source has been developed by us. In order to increase the lifetime of MOSFET and meet the requirements of every parameters, Drain voltage and quiescent current is set at a better point with a well-designed heat dissipation structure, we make the solid state amplifier stable in performance. Taking the microwave leakage into account, the chassis structure is optimized and designed, and the microwave absorption device is adopted to make the structure compact, protect other parts not affected by the microwave leakage. After the assembly is completed, the working parameters meet the design requirements very well. The MOSFET flange temperature and output parameters meet the design requirements.
       </abstract>
    </record>
  </records>
</xml>
