MOPR82

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URL	https://doi.org/10.18429/JACoW-IPAC2024-MOPR82
Title	Chemical robustness enhancement of negative electron affinity photocathodes through cesium-iodide deposition
Authors	S. Levenson, I. Bazarov, M. Andorf Cornell University (CLASSE) A. Galdi Università degli Studi di Salerno D. Jena, H. Xing, J. Maxson, J. Encomendero, M. Hines, Q. Zhu, V. Protasenko Cornell University
Abstract	Photocathodes at Negative Electron Affinity (NEA), like GaAs and GaN, allow for efficient production of spin-polarized electrons. When activated to NEA with cesium and an oxidant, they are characterized by an extreme sensitivity to chemical poisoning, resulting in a short operational lifetime. In this work, we demonstrate that deposition of a cesium iodide (CsI) layer can be used to enhance the dark lifetime of both GaN and GaAs photocathodes activated with cesium. The mechanism behind this improvement is investigated using X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM) techniques.
Paper	download: MOPR82.pdf
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Conference	15th International Particle Accelerator Conference
Series
Location	Nashville, TN
Date	19-24 May 2024
Publisher	JACoW Publishing, Geneva, Switzerland
Editorial Board	Fulvia Pilat - Oak Ridge National Laboratory Wolfram Fischer - Brookhaven National Laboratory Robert Saethre - Oak Ridge National Laboratory Petr Anisimov - Los Alamos National Laboratory Ivan Andrian - Elettra-Sincrotrone Trieste S.C.p.A.
Online ISBN	978-3-95450-247-9
Online ISSN	2673-5490
Received	17 May 2024
Revised	21 May 2024
Accepted	21 May 2024
Issued	01 July 2024
DOI	10.18429/JACoW-IPAC2024-MOPR82
Pages	646-649
Copyright	Published by JACoW Publishing under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s), the published article's title, publisher, and DOI.