TY  - CONF
AU  - Tawada, M.
AU  - Kikuchi, M.
AU  - Sakamoto, Y.
AU  - Someya, H.
AU  - Tenjin, K.
AU  - Tokuchi, A.
ED  - Boland, Mark
ED  - Tanaka, Hitoshi
ED  - Button, David
ED  - Dowd, Rohan
ED  - Schaa, Volker RW
ED  - Tan, Eugene
TI  - Development of Injection and Extraction Kickers for SuperKEKB Damping Ring
J2  - Proc. of IPAC2019, Melbourne, Australia, 19-24 May 2019
CY  - Melbourne, Australia
T2  - International Particle Accelerator Conference
T3  - 10
LA  - english
AB  - SuperKEKB is a double ring asymmetric collider to study the B meson physics, which is an upgrade project of KEKB. The 7 GeV electron (HER) and the 4 GeV positron ring (LER) collides at an interaction point. The positron beam produced by linac cannot meet the dynamic aperture restrictions of LER. Damping ring (DR) is required to reduce its injection emittance. Damping ring (DR) for SuperKEKB has two kicker magnets for the injection and the extraction, respectively. These kickers are required to meet the following specifications: (1) rise and fall time does not exceed 100 ns, (2) two bunches which are 96 ns apart must be kicked by single pulse, (3) the stability of peak current for the extraction kickers must be less than 0.1 %. Kicker magnets are designed as a conventional kicker with a ferrite core. The pulse shape is a double half sine for the two bunch injection. In order to achieve short rise time, a saturable inductance is used. The design and performance of kicker magnets and the power supplies are reported.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 3890
EP  - 3892
KW  - kicker
KW  - extraction
KW  - injection
KW  - power-supply
KW  - damping
DA  - 2019/06
PY  - 2019
SN  - 978-3-95450-208-0
DO  - DOI: 10.18429/JACoW-IPAC2019-THPRB036
UR  - http://jacow.org/ipac2019/papers/thprb036.pdf
ER  - 

TY  - CONF
AU  - Okamura, K.
AU  - Fukuda, K.
AU  - Kaito, T.
AU  - Kitai, H.
AU  - Kumamoto, D.
AU  - Lim, S.
AU  - Naito, F.
AU  - Sakamoto, K.
AU  - Takayama, K.
AU  - Tokuchi, A.
ED  - Boland, Mark
ED  - Tanaka, Hitoshi
ED  - Button, David
ED  - Dowd, Rohan
ED  - Schaa, Volker RW
ED  - Tan, Eugene
TI  - Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET
J2  - Proc. of IPAC2019, Melbourne, Australia, 19-24 May 2019
CY  - Melbourne, Australia
T2  - International Particle Accelerator Conference
T3  - 10
LA  - english
AB  - To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. As to gate charge characteristics, required electric charge to increase gate source voltage from 0 V to 20 V was about 80 nC. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. A 14 kV-490 A-5 us pulse with a rise time of 430 ns in the long pulse mode and a 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse mode were successfully demonstrated. This switch will be installed as a turn-off switch for the injec-tion ES kicker in the KEK-DA.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 4364
EP  - 4367
KW  - pulsed-power
KW  - high-voltage
KW  - power-supply
KW  - electron
KW  - operation
DA  - 2019/06
PY  - 2019
SN  - 978-3-95450-208-0
DO  - DOI: 10.18429/JACoW-IPAC2019-FRXXPLM3
UR  - http://jacow.org/ipac2019/papers/frxxplm3.pdf
ER  -