| Title |
New Activation Techniques for Higher Charge Lifetime from GaAs Photocathodes |
| Authors |
- O.H. Rahman, M. Gaowei, W. Liu, E. Wangpresenter
BNL, Upton, Long Island, New York, USA
- J.P. Biswas
Stony Brook University, Stony Brook, USA
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| Abstract |
GaAs is the choice of photocathode material for polarized electron sources. The well established method of activating GaAs for beam extraction is to use Cs and Oxygen to create a ’Negative Electron Affinity’(NEA) layer. However, this layer is highly sensitive to vacuum and gets damaged due to ion back bombardment in DC guns. In this work, we explore activation methods that used Tellurium in conjunction with the usual Cs and Oxygen. We report our method to activate GaAs and show charge lifetime results for our activation method. Our results show that the use of Te could potentially help with longer charge lifetimes from GaAs cathodes in DC guns.
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| Paper |
download TUPTS102.PDF [3.147 MB / 3 pages] |
| Export |
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| Conference |
IPAC2019 |
| Series |
International Particle Accelerator Conference (10th) |
| Location |
Melbourne, Australia |
| Date |
19-24 May 2019 |
| Publisher |
JACoW Publishing, Geneva, Switzerland |
| Editorial Board |
Mark Boland (UoM, Saskatoon, SK, Canada); Hitoshi Tanaka (KEK, Tsukuba, Japan); David Button (ANSTO, Kirrawee, NSW, Australia); Rohan Dowd (ANSTO, Kirrawee, NSW, Australia); Volker RW Schaa (GSI, Darmstadt, Germany); Eugene Tan (ANSTO, Kirrawee, NSW, Australia) |
| Online ISBN |
978-3-95450-208-0 |
| Received |
14 May 2019 |
| Accepted |
19 May 2019 |
| Issue Date |
21 June 2019 |
| DOI |
doi:10.18429/JACoW-IPAC2019-TUPTS102 |
| Pages |
2157-2159 |
| Copyright |
 Published by JACoW Publishing under the terms of the Creative Commons Attribution 3.0 International license. Any further distribution of this work must maintain attribution to the author(s), the published article's title, publisher, and DOI. |
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