Chen, G. Adhikari, G. Antipov, S.P. Baryshev, S.V. Jing, C.-J. Kovi, K. Schroeder, W.A. Spentzouris, L.K. JACoW Publishing Geneva, Switzerland 978-3-95450-184-7 10.18429/JACoW-IPAC2018-TUPML061 English 1677-1679 TUPML061 Contribution to a conference proceedings 2018 2018-06 https://doi.org/10.18429/JACoW-IPAC2018-TUPML061 http://jacow.org/ipac2018/papers/tupml061.pdf There is a strong motivation to develop and understand novel materials with the potential to be utilized as photocathodes, as these could have desirable photoemission properties for research and industrial applications. Nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) photocathodes have potential to become a material of choice for photocathode applications*. (N)UNCD has high quantum efficiency when processed in hydrogen plasma*, low surface roughness, and high electron conductivity through the bulk**. The mean transverse energy (MTE) was calculated for (N)UNCD thin films using the double-solenoid scan method. (N)UNCD thin film with thickness of 160nm was deposited on highly-doped silicon substrate. Studies of the MTE of a (N)UNCD sample were done using a tunable laser source with photon energies of 3.56 eV to 5.26 eV. These results are presented.