He, T.L. Huang, K. Ren, Z.L. Wang, L. Xu, D.R. Xu, H. JACoW Publishing Geneva, Switzerland 978-3-95450-184-7 10.18429/JACoW-IPAC2018-THPML136 English 5004-5007 THPML136 Contribution to a conference proceedings 2018 2018-06 https://doi.org/10.18429/JACoW-IPAC2018-THPML136 http://jacow.org/ipac2018/papers/thpml136.pdf Energetic primary electrons (~ keV) impinging on the diamond film with its both surface under bias field in ~ MV/m, will excite secondary electron (SE) response including SE generation & transport. Although there have been 3D Monte Carlo (MC) simulation to study the two processes, this paper will introduce another method. Based on optical dielectric model, 3D MC simulation was implemented to study the generation process, and SE generation function was obtained by fitting the calculations. Using this function, the diffusion-drift equation of charge carriers (electron and hole) can be solved in 1D for the transport process, and the variation of SE depth distribution with time can be obtained.