Yang, L. Long, F. ZhenHua, Z.H. JACoW Geneva, Switzerland 978-3-95450-182-3 10.18429/JACoW-IPAC2017-WEPVA068 English 3429-3431 WEPVA068 Contribution to a conference proceedings 2017 2017-05 http://dx.doi.org/10.18429/JACoW-IPAC2017-WEPVA068 http://jacow.org/ipac2017/papers/wepva068.pdf SiC is a new type of semiconducting material with rapid development after the first generation and the second generation of semiconductor materials represented by silicon and gallium arsenide. SiC-MOSFET has a high frequency, high breakdown voltage, high temperature, radiation and many other points, suitable for future use in the accelerator magnet power supply. In this paper, the development and operation of a SiC-MOSFET-based accelerator magnet power supply are described in detail. The experiment results show that the performance of this power supply is superior to that of the same specification using Si-MOSFET. The power supply adopts one-way AC power supply, and the output stage adopts the full bridge circuit topology. The power device adopts C2M0040120D SiC-MOSFET, the working frequency is 30 kHz, the output current is ± 20A, the output voltage is ± 20V, and power is 400W. The Digital Power Supply Control Module (DPSCM) is used to realize high-precision digital closed-loop control, which supports on-line debugging and PC control. Power supply can be used to correct the magnet power, with high efficiency, high stability, and fast response and so on.