Journals of Accelerator Conferences Website (JACoW)

JACoW is a publisher in Geneva, Switzerland that publishes the proceedings of accelator conferences held around the world by an international collaboration of editors.

URLhttps://doi.org/10.18429/JACoW-HIAT2025-THX03
TitleHigh energy ion implantation at BNL
Authors
  • C. Carlson, D. Steski
    Brookhaven National Laboratory
  • T. Kubley
    University of Michigan–Ann Arbor, University of Michigan
AbstractSilicon carbide (SiC) has several properties such as wide band gap and high voltage breakdown, that give it a significant advantage over silicon for the next generation of medium and high frequency applications. To fully realize these advantages, requires deep ion implantation (~> 6μm). Unfortunately, the energy of conventional ion implanters limits the implantation depth in SiC to approximately 1µm. Brookhaven National Laboratory (BNL) has developed a system that uses the 15 MV MP-class Tandem Van de Graaffs to implant ions in SiC to a depth >15 µm. By changing the ion beam energy in discrete steps, the overlapping implantations can build a uniform implantation profile from the maximum implantation depth to the surface. To implant ions near the surface of the SiC wafer requires the use of an energy absorber to degrade the ion energy from 10’s of MeV to a few keV. BNL has built a system to demonstrate the feasibility of this approach. The BNL system is described, and the results of high energy implantation for high voltage SiC devices are presented. Future improvements to the system are also discussed.
Paperdownload: THX03.pdf
CiteBibTeX, LaTeX, Text/Word, RIS, EndNote
Conference16th International Conference on Heavy Ion Accelerator Technology
Series
LocationEast Lansing, MI, USA
Date22-27 Jun 2025
PublisherJACoW Publishing, Geneva, Switzerland
Editorial BoardLing Wang (FRIB/MSU), Kelly Jaje (ANL), Michelle Wier (FRIB/MSU), Kent Wootton (ANL), Tong Zhang (FRIB/MSU)
Online ISBN978-3-95450-260-8
Online ISSN2673-5547
Received23 June 2025
Revised25 June 2025
Accepted25 June 2025
Issued13 October 2025
DOI10.18429/JACoW-HIAT2025-THX03
Pages270-273