| Title |
Simulations of Diamond Detectors with Schottky Contacts |
| Authors |
- G.I. Bell, J.R. Cary, D.A. Dimitrov, D. Meiser, D.N. Smithe, C.D. Zhou
Tech-X, Boulder, Colorado, USA
- M. Gaowei, E.M. Muller
SBU, Stony Brook, New York, USA
- J. Smedley
BNL, Upton, Long Island, New York, USA
|
| Abstract |
We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.
|
| Funding |
This work is supported by the US DOE Office of Science, department of Basic Energy Sciences, grant numbers DE-SC0006246 and DE-SC0007577. |
| Paper |
download MOPMA031.PDF [0.207 MB / 3 pages] |
| Export |
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| Conference |
IPAC2015, Richmond, VA, USA |
| Series |
International Particle Accelerator Conference (6th) |
| Proceedings |
Link to full IPAC2015 Proccedings |
| Session |
Monday Posters (Madison) |
| Date |
04-May-15 16:00–18:00 |
| Main Classification |
5: Beam Dynamics and EM Fields |
| Sub Classification |
D11 - Code Developments and Simulation Techniques |
| Keywords |
electron, simulation, detector, photon, scattering |
| Publisher |
JACoW, Geneva, Switzerland |
| Editors |
Stuart Henderson (ANL, Argonne, IL, USA); Evelyn Akers (Jlab, Newport News, VA, USA); Todd Satogata (JLab, Newport News, VA, USA); Volker R.W. Schaa (GSI, Darmstadt, Germany) |
| ISBN |
978-3-95450-168-7 |
| Published |
June 2015 |
| Copyright |
|
