| Title |
Photoemission from III-V Semiconductor Cathodes |
| Authors |
- S.S. Karkare
Cornell University, Ithaca, New York, USA
- I.V. Bazarov, L. Cultrerapresenter, W.J. Schaff
Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
- X.G. Jin
Institute for Advanced Research, Nagoya, Japan
- Y. Takeda
Nagoya University, Nagoya, Japan
|
| Abstract |
Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the samples measured at the ERL injector in KEK.
|
| Paper |
download MOPRI057.PDF [0.178 MB / 3 pages] |
| Export |
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| Conference |
IPAC2014, Dresden, Germany |
| Series |
International Particle Accelerator Conference (5th) |
| Proceedings |
Link to full IPAC2014 Proccedings |
| Session |
Poster Session, Ribery Area |
| Date |
16-Jun-14 16:00–18:00 |
| Main Classification |
03 Particle Sources and Alternative Acceleration Techniques |
| Sub Classification |
T02 Electron Sources |
| Keywords |
electron, cathode, vacuum, photon, scattering |
| Publisher |
JACoW Publishing, Geneva, Switzerland |
| Editors |
Christine Petit-Jean-Genaz (CERN, Geneva, Switzerland); Gianluigi Arduini (CERN, Geneva, Switzerland); Peter Michel (HZDR, Dresden, Germany); Volker RW Schaa (GSI, Darmstadt, Germany) |
| ISBN |
978-3-95450-132-8 |
| Published |
July 2014 |
| Copyright |
|
