| Title |
Suppression of Upstream Field Emission in RF Accelerators |
| Authors |
- F. Marhauser, S.V. Benson, D. Douglas
JLab, Newport News, Virginia, USA
- L.J.P. Ament
ASML US Inc., Wilton, CT, USA
|
| Abstract |
So-called electron loading is the primary cause for cavity performance limitations in modern RF accelerating cavities. In superconducting RF cavities in particular, the onset of parasitic electron effects may start at field levels as low as a few MV/m. Electron loading can be attributed to mainly three phenomena: field emission, multiple impact electron amplification, and RF electrical breakdown. Field emission has been a persistent issue despite advances in SRF technology, whereas RF electrical breakdown and multipacting can be controlled by appropriate cavity design choices. Field emission becomes a major concern when the electrons emitted are captured by the accelerating RF field and directed along the beam axis through a series of cavities or even entire cryomodules. Consequently, electrons can accumulate energy comparable to that of the main beam over similar distances. This can represent a considerable dark current, which can travel downstream or upstream depending on the field-emitting site of origin. In this paper, a method is presented that can significantly suppress the upstream field emission by design.
|
| Funding |
Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177 |
| Paper |
download MOPB061.PDF [1.066 MB / 4 pages] |
| Conference |
SRF2015, Whistler, BC, Canada |
| Series |
International Conference on RF Superconductivity (17th) |
| Proceedings |
Link to full SRF2015 Proccedings |
| Session |
Poster Session |
| Date |
14-Sep-15 14:20–17:30 |
| Main Classification |
Fundamental SRF R&D - Bulk Nb |
| Keywords |
electron, cavity, cryomodule, SRF, site |
| Publisher |
JACoW, Geneva, Switzerland |
| Editors |
Robert E. Laxdal (TRIUMF, Vancouver, BC, Canada); Jana Thomson (TRIUMF, Vancouver, BC, Canada); Volker RW Schaa (GSI, Darmstadt, Germany) |
| ISBN |
978-3-95450-178-6 |
| Published |
December 2015 |
| Copyright |
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