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DOI:10.18429/JACoW-ICAP2015-WEP32
Title Simulation of the Distribution of Parasitic Ions in the Potential of an Electron Beam
Authors
  • E. Brentegani, U. van Rienen
    Rostock University, Faculty of Computer Science and Electrical Engineering, Rostock, Germany
  • W. Hillert, D. Sauerland
    ELSA, Bonn, Germany
  • A. Meseck
    HZB, Berlin, Germany
Abstract In an electron machine, positively charged ions are generated by direct collision between the beam and the residual gas molecules or by synchrotron radiation. If no countermeasure is employed, they can be trapped in the beam potential and accumulate over time until the full beam neutralization is reached. Ion clouds can cause incoherent tune shifts and coherent beam instabilities, therefore they are a performance limiting factor for high current electron storage rings as well as Energy Recovery Linacs (ERLs). In order to give a detailed estimation of their effects on the beam dynamics and to further optimize the existing ion clearing techniques, accurate knowledge on the ion density distribution is required. In the following we present numerical studies on the distribution of ionized gas while interacting with electron bunch trains. The simulations have been performed with the software MOEVE PIC Tracking developed at the University of Rostock*.
Footnotes & References * A. Markovik, Simulation of the interaction of positively charged beams and electron clouds, PhD thesis, 2013
Funding Work foundend by BMBF, Germany under contract 05K13HRC
Paper download WEP32.PDF [0.443 MB / 3 pages]
Conference ICAP2015, Shanghai, China
Series International Computational Accelerator Physics Conference (12th)
Proceedings Link to full ICAP2015 Proccedings
Session Poster Session Wollaston
Date 14-Oct-15   13:30–15:30
Main Classification B-1 Beam Dynamics Simulation
Keywords ion, electron, simulation, vacuum, linac
Publisher JACoW, Geneva, Switzerland
Editors Kwok C. Ko (SLAC, Menlo Park, CA, USA); Volker R.W. Schaa (GSI, Darmstadt, Germany); Chuanxiang Tang (Tsinghua University, Beijing, China); Heping Yan (SINAP, Shanghai, China)
ISBN 978-3-95450-136-6
Published February 2016
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