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DOI:10.18429/JACoW-ICAP2015-WEP08
Title Tuner System Optimization in 10 MeV Cyclotron Cavity
Authors
  • M. Mohamadian, H. Afarideh, S. Sabounchi, M. Salehi
    AUT, Tehran, Iran
  • J.-S. Chai, M. Ghergherehchi
    SKKU, Suwon, Republic of Korea
  • J.-S. Chai
    KIRAMS, Seoul, Republic of Korea
Abstract Since fixed frequency cavities need fine tuning for the one operating frequency, their design require for the accurate tuning system to reach the best performance and quality factor. In the case of our cyclotron, the fine tuning device, capacitive trimmers, can be done by hydraulically squeezing the outer capacitive tuning disk to the inner disk which is connected to the cavity Dee part. This generates a Δf/f0 = 0.7% (Δf=500 kHz), sufficient to correct pressure changes, thermal effects acting on the cavity and any other supervention. Computer model of the RF system was developed in the CST and double checked by HFSS. Necessary resonant frequency and increase of the voltage along the gaps were achieved. Optimization of the RF cavity parameters leads us into cavity with quality factor about 15000, and insertion loss about -0.06dB and also reflection power about -57dB, RF power dissipation is about 40 kW. We have studied some models with different in accelerating gap, dimension of Dee and Liner, and also optimization of the coupling and tuning capacitors. We analyzed the effect of the tuner and revealed that better diameter and gap space for the tuner is on the 60 and 2mm.
Paper download WEP08.PDF [0.675 MB / 3 pages]
Conference ICAP2015, Shanghai, China
Series International Computational Accelerator Physics Conference (12th)
Proceedings Link to full ICAP2015 Proccedings
Session Poster Session Wollaston
Date 14-Oct-15   13:30–15:30
Main Classification C-2 Cavity Design and Optimization
Keywords cavity, cyclotron, coupling, simulation, software
Publisher JACoW, Geneva, Switzerland
Editors Kwok C. Ko (SLAC, Menlo Park, CA, USA); Volker R.W. Schaa (GSI, Darmstadt, Germany); Chuanxiang Tang (Tsinghua University, Beijing, China); Heping Yan (SINAP, Shanghai, China)
ISBN 978-3-95450-136-6
Published February 2016
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